Development of an intelligent preamplifier for semiconductor detectors
نویسندگان
چکیده
The results of engineering an intelligent preamplifier for high purity germanium gamma-detectors are presented. An is a low-noise, speed resistive feedback charge-sensitive with built-in microcontroller and additional units that enable control detector parameters. It also allows the performance managing internal testing pulser, sensor liquid nitrogen level in Dewar, humidity, pressure temperature sensors sealed section. Intelligent operation, set-up, parameter measurements controlled by software.
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Please make the following corrections on subject report. Figures 3-2 and 3-3 should be replaced by the attached figures. Page 91, line 12 should be changed to read "The Fano factor established by these measurements is .30 ± 0.03 which is entirely consistent with the approximate value of 0.32 derived from Van Roosbroeck's curves."
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ژورنال
عنوان ژورنال: Nuclear Technology & Radiation Protection
سال: 2021
ISSN: ['1451-3994', '1452-8185']
DOI: https://doi.org/10.2298/ntrp201109008k